 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| IRF9150 Data Sheet February 1999 File Number 2280.3 -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA49230. Features * -25A, -100V * rDS(ON) = 0.150 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance Symbol D Ordering Information PART NUMBER IRF9150 PACKAGE TO-204AE BRAND IRF9150 G S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-204AE DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) 5-20 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 IRF9150 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF9150 -100 -100 -25 -18 -100 20 150 1.2 1300 -25 -55 to 150 300 UNITS V V A A A V W W/oC mJ A oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Avalanche Current (Repetitive or Nonrepetitive) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IAR Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to TJ = 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS ID(ON) IGSS rDS(ON) gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd CISS COSS CRSS LD Measured Between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the Center of Die Measured From the Source Lead, 6mm (0.25in) From the Flange and the Source Bonding Pad Modified MOSFET Symbol Showing the Internal Devices Inductances D LD G LS S TEST CONDITIONS ID = -250A, VGS = 0V, (Figure 10) VGS = VDS, ID = -250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V TC = 125oC VDS > ID(ON) x rDS(ON)MAX, VGS = 10V VGS = 20V ID = -10A, VGS = -10V (Figures 8, 9) VDS = -10V, ID = -12.5 (Figure 12) VDD = -50V, ID -25A, RG = 6.8, RL = 2.0, (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature MIN -100 -2 -25 4 - TYP 0.09 10 16 110 65 46 82 14 42 2400 850 400 5.0 MAX -4 -25 -250 100 0.150 24 160 100 70 120 - UNITS V V A A A nA S ns ns ns ns nC nC nC pF pF pF nH Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain "Miller" Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance VGS = -10V, ID = -25A, VDS = 0.8 x Rated BVDSS (Figures 14, 19, 20) Gate Charge is Essentially Indpendent of Operating Temperature - VDS = -25V, VGS = 0V, f = 1MHz (Figure 11) - Internal Source Inductance LS - 13 - nH Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient RJC RJA Free Air Operation - - 0.83 30 oC/W oC/W 5-21 IRF9150 Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode G D MIN - TYP - MAX -25 -100 UNITS A A S Source to Drain Diode Voltage(Note 2) Reverse Recovery Time Reverse Recovery Charge NOTES: VSD trr QRR TC = 25oC, ISD = 25A, VGS = 0V (Figure 13) TJ = 25oC, ISD = 25A, dISD/dt = 100A/s TJ = 25oC, ISD = 25A, dISD/dt = 100A/s 0.3 0.9 150 0.7 1.5 300 1.5 V ns C 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 25V, starting TJ = 25oC, L = 3.2mH, RG = 25, peak IAS = 25A See Figures 15, 16. Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 Unless Otherwise Specified -30 -25 ID, DRAIN CURRENT (A) -20 -15 -10 -5 0 0 25 50 75 100 TA , CASE TEMPERATURE (oC) 125 150 0.6 0.4 0.2 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE ZJC, NORMALIZED TRANSIENT THERMAL IMPEDANCE (oC/W) 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 10-4 10-3 10-2 10-1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 1 10 PDM 0.01 10-5 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 5-22 IRF9150 Typical Performance Curves Unless Otherwise Specified (Continued) -100 100 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) -80 VGS = 14V VGS = 12V PULSE DURATION = 80s VGS = 10V 10s -60 VGS = 9V VGS = 8V VGS = 7V 100s 10 OPERATION IN THIS AREA IS LIMITED BY rDS(ON) TC = 25oC TJ = MAX RATED SINGLE PULSE 1 100 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 1ms 10ms DC -40 -20 VGS = 4V VGS = 6V VGS = 5V 1 0 0 -10 -20 -30 -40 -50 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS PULSE DURATION = 80s -40 VGS = 10V IDS(ON), DRAIN TO SOURCE CURRENT (A) -50 -100 PULSE DURATION = 80s VDS -50V ID, DRAIN CURRENT (A) VGS = 8V -30 VGS = 7V -10 -20 VGS = 6V VGS = 5V VGS = 4V 0 -1 -2 -3 -4 -5 -1.0 125oC 25oC -0.1 0 -2 -4 -6 -8 -10 VGS, GATE TO SOURCE VOLTAGE (V) -10 0 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS 350 PULSE DURATION = 80s rDS(ON), DRAIN TO SOURCE 300 ON RESISTANCE () 250 200 150 100 50 0 0 -20 -40 -60 -80 -100 ID, DRAIN CURRENT (A) VGS = - 20V VGS = -10V NORMALIZED DRAIN TO SOURCE ON RESISTANCE 2.2 VGS = 10V, ID = -25A 1.8 1.4 1.0 0.6 0.2 -40 0 40 80 120 TJ , JUNCTION TEMPERATURE (oC) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 5-23 IRF9150 Typical Performance Curves 1.25 ID = 250A NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.15 C, CAPACITANCE (pF) 4000 Unless Otherwise Specified (Continued) 5000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGS 1.05 3000 CISS 2000 COSS 1000 CRSS 0.95 0.85 0.75 -40 0 40 80 120 160 0 0 -10 -20 -30 -40 -50 TJ , JUNCTION TEMPERATURE (oC) VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 15 gfs, TRANSCONDUCTANCE (S) PULSE DURATION = 80s 100 25oC ISD, DRAIN CURRENT (A) 12 10 150oC 25oC 1 9 150oC 6 3 0 0 -10 -20 -30 -40 -50 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 I D , DRAIN CURRENT (A) VSD, SOURCE TO DRAIN VOLTAGE (V) FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE 0 ID = -25A VGS, GATE TO SOURCE (V) -5 -10 -15 VDS = -80V VDS = -50V VDS = -20V -20 -25 0 20 40 60 80 100 120 140 160 Qg(TOT), TOTAL GATE CHARGE (nC) 180 200 FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 5-24 IRF9150 Test Circuits and Waveforms VDS tAV L VARY tP TO OBTAIN REQUIRED PEAK IAS RG 0 + VDD VDD 0V VGS DUT tP IAS 0.01 IAS tP BVDSS VDS FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON td(ON) tr RL 0 10% tOFF td(OFF) tf 10% DUT VGS RG VDD + VDS VGS 0 90% 90% 10% 50% PULSE WIDTH 90% 50% FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS CURRENT REGULATOR -VDS (ISOLATED SUPPLY) 0 VDS DUT 12V BATTERY 0.2F 50k 0.3F Qgs D G 0 Ig(REF) IG CURRENT SAMPLING RESISTOR S +VDS ID CURRENT SAMPLING RESISTOR 0 DUT VDD Qgd VGS Qg(TOT) Ig(REF) FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS 5-25 IRF9150 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 5-26 |
Price & Availability of IRF9150
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |